HN1C01FE-GR,LXHF Specifications
Manufacturer | Toshiba Semiconductor and Storage |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Product Status | Active |
Transistor Type | 2 NPN (Dual) |
Operating Temperature | 150°C (TJ) |
Frequency - Transition | 80MHz |
Supplier Device Package | ES6 |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
Current - Collector (Ic) (Max) | 150mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
Voltage - Collector Emitter Breakdown (Max) | 50V |
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