SIZF918DT-T1-GE3 Specifications
Manufacturer | Vishay Siliconix |
FET Type | 2 N-Channel (Dual), Schottky |
FET Feature | Standard |
Power - Max | 3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerWDFN |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.4V @ 250µA, 2.3V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V |
Supplier Device Package | 8-PowerPair® (6x5) |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V, 56nC @ 10V |
Drain to Source Voltage (Vdss) | 30V |
Input Capacitance (Ciss) (Max) @ Vds | 1060pF @ 15V, 2650pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 23A (Ta), 40A (Tc), 35A (Ta), 60A (Tc) |
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