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Exploring the MMBT3906 Transistor: A Comprehensive Guide

5/24/2024

Introduction

 

Transistors are the fundamental building blocks of modern electronic devices. Among the myriad of transistors available, the MMBT3906 stands out due to its versatility and efficiency. This blog aims to delve into the features, applications, and specifications of the MMBT3906 transistor, providing a thorough understanding for electronics enthusiasts and professionals alike.

 

Table of Content

 

 

 

What is the  MMBT3906 Transistor?

The goal of the Taiwan Semiconductor MMBT3906 PNP Bipolar Transistor is to provide a high surge current capability with minimal power loss. This transistor is perfect for automated installation and has high efficiency. The voltages that the MMBT3906 transistor is meant to operate at are -40V for the collector-to-base (VCBO), -40V for the collector-to-emitter (VCEO), and -5V for the emitter-to-base (VEBO). This transistor has a 350mW power dissipation (PD) and a collector current of -200mA. The J-STD-020 standards provide the MMBT3906 PNP transistor with a Moisture Sensitivity Level (MSL-1), while the IEC 61249-2-21 standards state that the transistor is halogen-free. This transistor is most suited for usage in lighting applications, onboard DC/DC converters, adapters, and switching mode power supplies (SMPS). 

 

Figure1- MMBT3906

Figure1- MMBT3906

 

 

 

Pinout of MMBT3906

 

 

Figure2-Pinout of MMBT3906

 

 

 

MMBT3906 CAD Model

 

Symbol

Figure3-Symbol

Figure3-Symbol

 

 

 

 

Footprint

 

Figure4-Footprint

Figure4-Footprint

 

 

3D Model

 

 

Figure5-3D Model

Figure5-3D Model

 

 MMBT3906 Specification

 

TYPE

DESCRIPTION

Category

Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Single Bipolar Transistors

Mfr

onsemi

Series

SOT-23

Packaging

Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®

Part Status

Obsolete

Transistor Type

PNP

Current - Collector (Ic) (Max)

200 mA

Voltage - Collector Emitter Breakdown (Max)

40 V

Vce Saturation (Max) @ Ib, Ic

300mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 10mA, 1V

Power - Max

200 mW

Frequency - Transition

300MHz

Operating Temperature

55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3

Base Product Number

MMBT3906

 

 

 MMBT3906 FEATURES

 

  • Low power loss and high efficiency
  • Ideal for automated placement
  • High surge current capability
  • -40V of collector-to-base voltage (VCBO)
  • -40V of collector-to-emitter voltage (VCEO)
  • -5V of emitter-to-base voltage (VEBO)
  • -200mA collector current (IC)
  • 350mW power dissipation (PD)
  • -55°C to 150°C junction temperature range
  • Moisture sensitivity level: level 1, per J-STD-020
  • RoHS compliant
  • Halogen-free according to IEC 61249-2-21

 

 

MMBT3906 Applications

The versatility of the MMBT3906 makes it suitable for a wide range of applications:

 

  1. Switching Circuits: Its high switching speed is advantageous in digital circuits requiring rapid on/off states.
  2. Amplification: Due to its high transition frequency, the transistor can be used in low-power audio amplifiers and signal amplification circuits.
  3. Signal Processing: It works well in analog signals in various electronic devices.
  4. Voltage Regulation: As part of a feedback loop in voltage regulator circuits, it helps maintain stable output voltage.
  5. Consumer Electronics: Common in devices like radios, televisions, and other household electronics that require reliable switching and amplification.

 

 

MMBT3906 Package

Figure6-MMBT3906 Package

Figure6-MMBT3906 Package

 

Replacement and Equivalent for MMBT3906 transistor

 

You can replace the MMBT3906 with the 2SA1366, 2SA15182SA15192SA1520, 2SA1521, 2SB710A, BC807, BCW68, BCX17, 

FMMT2907, FMMT2907A, FMMT2907AR, FMMT2907R, FMMT3906, FMMT591, FMMT591Q, FMTA55.

 

MMBT3906 Datasheet

 

 MMBT3906 Datasheet

 

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